BAW27 vishay semiconductors 1 (3) rev. 3, 14-feb-01 www.vishay.com document number 85548 switching diode features silicon epitaxial planar diode low forward voltage drop high forward current capability applications high speed switch and general purpose use in computer and industrial applications 94 9367 order instruction type type differentiation ordering code remarks BAW27 v =75v BAW27tap ammopack BAW27 v rrm = 75 v BAW27tr tape and reel absolute maximum ratings t j = 25 c parameter test conditions type symbol value unit repetitive peak reverse voltage v rrm 75 v reverse voltage v r 60 v peak forward surge current t p =1 s i fsm 4 a forward current i f 600 ma average forward current v r =0 i fav 300 ma power dissi p ation l=4 mm, t l =45 c p v 440 mw power dissipation l=4 mm, t l 25 c p v 500 mw junction temperature t j 200 c storage temperature range t stg 65...+200 c maximum thermal resistance t j = 25 c parameter test conditions symbol value unit junction ambient l=4 mm, t l =constant r thja 350 k/w
BAW27 vishay semiconductors 2 (3) rev. 3, 14-feb-01 www.vishay.com document number 85548 electrical characteristics t j = 25 c parameter test conditions type symbol min typ max unit i f =10ma v f 0.67 0.75 v forward voltage i f =50ma v f 0.8 0.85 v forward voltage i f =200ma v f 0.95 1.0 v i f =400ma v f 1.12 1.25 v reverse current v r =60 v i r 100 na reverse current v r =60 v, t j =100 c i r 50 a breakdown voltage i r =5 a, t p /t=0.01, t p =0.3ms v (br) 75 v diode capacitance v r =0, f=1mhz, v hf =50mv c d 4 pf reverse recovery time i f =i r =10...100ma, i r =0.1xi r t rr 6 ns dimensions in mm cathode identification ? ?? ? ? ? ? ?? ? ?M ?? ????????? ???????? ????????? ?? ??? ????????????? ? ??MM ???????? ????? ???? ? ? ??? ??? ????? ? ? ?????? ? ? ? ?M ??
BAW27 vishay semiconductors 3 (3) rev. 3, 14-feb-01 www.vishay.com document number 85548 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay-semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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